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TiC/SiC Duplex-Coated Graphite

A two-layer CVD stack: TiC bond coat (5–10 µm) plus SiC top coat (50–100 µm) combines thermal-match to graphite with chemical durability against silicon-rich vapours.

Features

Gradient thermal expansion – TiC layer relieves stress, prevents spallation


Non-reactive to Si melt – service life 5× longer than bare graphite in silicon environment


Dense barrier – blocks Na and Fe diffusion, keeping silicon purity >99.9999 %


Machinable after coating – final profiling possible without delamination

Industrial Applications

Energy/Solar

Energy/Solar

Directional-solidification crucibles for multi-crystal silicon ingots

LED

LED

Susceptors for hydride-vapour-phase epitaxy (HVPE) of GaN

Semiconductor

Semiconductor

Heaters for silicon-germanium epitaxy systems

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