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SiC-Coated Graphite

A dense, CVD-applied silicon-carbide layer (typ. 50–100 µm) seals the graphite surface, raising oxidation threshold to ~1,350 °C and eliminating particle generation in high-vacuum reactors.

Features

Hermetic seal – stops out-gassing and prevents process contamination


Hard surface (HV 2,500) – resists mechanical abrasion during wafer loading


Chemically inert – survives HCl, NH₃ and metal-organic precursors used in MOCVD


Optical smoothness (<0.2 µm Ra) – improves thermal coupling to wafer

Industrial Applications

Semiconductor

Semiconductor

Susceptors and wafer carriers for MOCVD of GaN, SiC epi layers

LED

LED

Pocket susceptors for blue-LED multi-wafer reactors

Energy/Solar

Energy/Solar

Silicon-ingot casting crucible liners to reduce Fe contamination

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